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3. Effect of Non-Idealities. 4. Transductor Design.
Twente, Enschede, The Netherlands, Sept. M. J. Pelgrom, A. C. Duinmaijer, and A. P. G. Welbers, Matching properties of MOS transistors, IEEE J. Solid-State Circuits, vol. 24, no. 5, pp. 1433-1440, Oct. 1989. Bram Nauta was bom in Hengelo (O., The Netherlands, on January 20, 1964. degree (cum laude) in electrical engineering from the University of Twente, Enschede, The Netherlands, in 1987 on the subject of BiMOS OTA design.
Springer Us, Springer.
p. cm. - (The K1uwer international series in engineering and computer science. Analog circuits and signal processing) Includes bibliographieal references and index.
First a differential transconductance element based on CMOS inverters is described
First a differential transconductance element based on CMOS inverters is described. This integrator has good linearity properties and nondominant poles in the gigahertz range owing to the absence of internal nodes. The integrator has a tunable DC gain, resulting in a controllable integrator quality factor.